STUDY METHODOLOGY OF ELECTRICAL CONDUCTIVITY IN SiS:Er MONOCRYSTAL

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STUDY METHODOLOGY OF ELECTRICAL CONDUCTIVITY IN SiS:Er MONOCRYSTAL

Summary

associate professor R.K. Huseynov1., associate professor S.P. Isganderova1., p.f.d.b/m. Rustamova S.K1., Yusubova L.E2., Zarbaliyeva V.S2.

Ganja State University

Azerbaijan State Agrarian University

The study of the change of electrical conductivity of SiS:Er monocrystals depending on the voltage determined the presence of electroluminescence additive centers, their penetration depth, the width of the forbidden zone, and other parameters characterizing their electrophysical properties.

МЕТОДИКА ИСЛЕДОВАНИЯ ЕЛЕКТРОПРОВОДНОСТИ В

MONOCRYSTAL SiS:Er

Assoc. R.K. Guseynov1., Assoc. Isganderova С.П1., д.ф.п., st.prep. Rustamova S.K1.,.assist. Yusubova Л.Е2., ст.преп. Зарбалиева В.С2.

Ganja State University

Azerbaijan State Agrarian University

The study of the change in electrical conductivity of SiS:Er single crystals depending on the voltage determined the presence of additive centers of electroluminescence, the depth of their penetration, the width of the forbidden zone and other parameters characterizing their electrophysical properties.

METHOD FOR STUDYING ELECTRICAL CONDUCTIVITY IN

SINGLE CRYSTAL SiS:Er

Summary

As. pr. R.K. Huseynov1., Ass. Pr. Isganderova S.P1., Doct. of Ph., Sen. Lect. Rustamova S.K1.,

assistant Yusubova L.E2., senior teacher Zarbalieva V.S2.

Ganja State University

Azerbaijan State Agrarian University

he study of changes in the electrical conductivity of SiS:Er single crystals depending on voltage determined the presence of additive electroluminescence centers, their penetration depth, band gap and other parameters characterizing their electrophysical